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21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
Velocium Products
18 - 20 GHz HPA - APH478
P1010 Chip Device Layout
Features
Excellent Linear Output Amplifier Stage 19.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+5.5 VDC 600,670 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Supply Current (Id) (Vd=5.0V, Vg=-0.3V Typical) Units GHz dB dB dB dB dB dBm dBm VDC VDC mA Min. 21.0 -1.0 Typ. 12.0 10.0 19.0 +/-0.5 +30.0 +39.0 +5.0 -0.3 950 Max. 24.0 0.0 -
(1) Measured at +18 dBm per tone output carrier level across the full frequency band. (2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
Velocium Products
18 - 20 GHz HPA - APH478
P1010
Power Amplifier Measurements
Measured Performance Characteristics (Typical Performance at 25C) Vd1 = Vd2 = 5.0V, Id1 = 350 mA, Id2 = 600mA
28 26 24 22 18 16 14 12 10 8 6 21 22 23 24 25 26 Frequency (GHz)
Pout (dBm)
Gain (dB)
20
44 42 40 38 36 34 32 30 P1dB 28 26 24 22 21 22
IP3
23
24
25
26
Frequency (GHz)
Two tone test with 18 dBm / tone
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 21 22 23 24 25 26 Frequency (GHz) Output Return Loss (dB) Input Return Loss (dB)
0 -5 -10 -15 -20 -25 -30 21 22 23 24 25 26 Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 7
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
Velocium Products
18 - 20 GHz HPA - APH478
P1010
Power Amplifier Measurements (cont.)
Measured Performance Characteristics (Typical Performance at 25C) Vd1 = Vd2 = 5.0V, Id1 = 350 mA, Id2 = 600mA
42.0 41.0
IP3 (dBm)
44 42 40 38 36 34 32 30 28 26 24 22 21 22
IP3
40.0 39.0 38.0 37.0 36.0 35.0 34.0 18 20 22 24 26 28 Pout (dBm /Tone)
2 2 GHz 2 3 GHz
Pout (dBm)
P1dB
23
24
25
26
Frequency (GHz)
Two tone test with 18 dBm / tone (Fixtured) (Fixtured)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 7
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
Velocium Products
18 - 20 GHz HPA - APH478
P1010
S-Parameters
Measured Performance Characteristics (Typical Performance at 25C) Vd1 = Vd2 = 5.0V, Id1 = 350 mA, Id2 = 600mA
Freq GHz S11 Mag 19 0.667 19.5 0.646 20 0.615 20.5 0.575 21 0.507 21.5 0.391 22 0.261 22.5 0.159 23 0.061 23.5 0.069 24 0.215 24.5 0.391 25 0.495 25.5 0.556 26 0.576 26.5 0.584 27 0.592
S11 Ang S21 Mag -145.777 2.284 -152.152 2.956 -159.364 4.024 -170.057 5.629 176.378 7.582 162.789 9.193 155.884 9.745 154.434 9.774 138 9.8 -28.823 9.68 -50.017 9.38 -74.64 8.613 -93.496 7.307 -107.082 5.977 -119.686 4.92 -128.704 4.172 -135.713 3.604
S21 Ang S12 Mag -174.037 0.001 166.632 0.002 144.714 0.001 117.504 0.003 83.068 0.003 43.644 0.003 4.286 0.005 -31.231 0.006 -65.287 0.005 -99.629 0.006 -134.977 0.009 -171.028 0.007 153.658 0.006 123.21 0.007 96.402 0.005 70.47 0.004 47.365 0.003
S12 Ang S22 Mag -124.391 0.734 -179.361 0.749 -149.527 0.758 128.822 0.768 31.487 0.722 -0.28 0.594 -62.166 0.443 -116.626 0.335 -133.835 0.271 -179.986 0.25 142.261 0.245 102.741 0.231 86.323 0.218 88.709 0.202 65.418 0.192 54.436 0.186 16.612 0.159
S22 Ang 112.353 105.32 96.557 83.26 66.609 46.903 32.49 22.212 14.504 0.269 -20.873 -49.912 -82.78 -104.641 -124.65 -140.237 -151.105
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
P1010
Mechanical Drawing
1.310 (0.052)
0.718 (0.028)
1
2
0.719 (0.028)
0.0 0.0
6
5
4
3
4.490 (0.177)
0.628 1.028 (0.025) (0.041)
2.858 3.258 (0.113) (0.128)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.647 mg. Bond Pad #1 (RF In) Bond Pad #2 (RF Out) Bond Pad #3 (Vd2) Bond Pad #4 (Vg2) Bond Pad #5 (Vd1) Bond Pad #6 (Vg1)
Bias Arrangement
RF In
1
2
RF Out
Bypass Capacitors - See App Note [2]
6
Vg1 10 Vd1
5
Vg2 10
4
3
Vd2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
P1010
App Note [1] Biasing - It is recommended to separately bias each stage at Vd(1,2)=5.0V, Id1=350mA, and Id2=600mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel Temperature deg Celsius deg Celsius deg Celsius
Rth
MTTF Hours
FITs
C/W C/W C/W
E+ E+ E+
E+ E+ E+
Bias Conditions: Vd1=Vd2=5.0V, Id1=350 mA, Id2=600 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 7
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
Velocium Products
18 - 20 GHz HPA - APH478
P1010
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Page 7 of 7 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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